IndiumV3, Main, Repository, bibRecord, 001118

Band parameters of InGaAs/GaAs quantum dots: electronic properties study

Identifieur interne : 001118 ( Main/Repository ); précédent : 001117; suivant : 001119

Band parameters of InGaAs/GaAs quantum dots: electronic properties study

Auteurs : RBID : Pascal:14-0041696

Descripteurs français

Pascal (Inist)
- Effet contrainte, Structure bande, Discontinuité bande, Bande valence, Facteur g, Masse effective, Exciton, Arséniure d'indium, Arséniure de gallium, Point quantique, Alliage ordonné, Couche contrainte, InGaAs, GaAs.

English descriptors

KwdEn :
- Band offset, Band structure, Effective mass, Excitons, Gallium arsenides, Indium arsenides, Ordered alloy, Quantum dots, Strained layer, Stress effects, Valence bands, g-factor.

Abstract

We have made a systematic investigation of the band diagram calculation of strained and unstrained In_xGa_1-xAs alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of In_xGa_1-xAs/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained In_xGa_1-xAs/GaAs system. The K valence band parameter as well as g* Landé factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000187

Links to Exploration step

Pascal:14-0041696

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Band parameters of InGaAs/GaAs quantum dots: electronic properties study</title>
<author><name sortKey="Yahyaoui, M" uniqKey="Yahyaoui M">M. Yahyaoui</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage</s1>
<s2>7021 Zarzouna, Bizerte</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Tunisie</country>
<wicri:noRegion>7021 Zarzouna, Bizerte</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sellami, K" uniqKey="Sellami K">K. Sellami</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage</s1>
<s2>7021 Zarzouna, Bizerte</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Tunisie</country>
<wicri:noRegion>7021 Zarzouna, Bizerte</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Boujdaria, K" uniqKey="Boujdaria K">K. Boujdaria</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage</s1>
<s2>7021 Zarzouna, Bizerte</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Tunisie</country>
<wicri:noRegion>7021 Zarzouna, Bizerte</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chamarro, M" uniqKey="Chamarro M">M. Chamarro</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut des Nanosciences de Paris, Université Pierre et Marie Curie-Paris 6, CNRS-UMR7588</s1>
<s2>Paris 75015</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Testelin, C" uniqKey="Testelin C">C. Testelin</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut des Nanosciences de Paris, Université Pierre et Marie Curie-Paris 6, CNRS-UMR7588</s1>
<s2>Paris 75015</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0041696</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 14-0041696 INIST</idno>
<idno type="RBID">Pascal:14-0041696</idno>
<idno type="wicri:Area/Main/Corpus">000187</idno>
<idno type="wicri:Area/Main/Repository">001118</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band offset</term>
<term>Band structure</term>
<term>Effective mass</term>
<term>Excitons</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Ordered alloy</term>
<term>Quantum dots</term>
<term>Strained layer</term>
<term>Stress effects</term>
<term>Valence bands</term>
<term>g-factor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet contrainte</term>
<term>Structure bande</term>
<term>Discontinuité bande</term>
<term>Bande valence</term>
<term>Facteur g</term>
<term>Masse effective</term>
<term>Exciton</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Point quantique</term>
<term>Alliage ordonné</term>
<term>Couche contrainte</term>
<term>InGaAs</term>
<term>GaAs</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have made a systematic investigation of the band diagram calculation of strained and unstrained In<sub>x</sub>
Ga<sub>1-x</sub>
As alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of In<sub>x</sub>
Ga<sub>1-x</sub>
As/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained In<sub>x</sub>
Ga<sub>1-x</sub>
As/GaAs system. The K valence band parameter as well as g* Landé factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>28</s2>
</fA05>
<fA06><s2>12</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Band parameters of InGaAs/GaAs quantum dots: electronic properties study</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>YAHYAOUI (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SELLAMI (K.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BOUJDARIA (K.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CHAMARRO (M.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>TESTELIN (C.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage</s1>
<s2>7021 Zarzouna, Bizerte</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institut des Nanosciences de Paris, Université Pierre et Marie Curie-Paris 6, CNRS-UMR7588</s1>
<s2>Paris 75015</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s2>125018.1-125018.7</s2>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000501604650230</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>62 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0041696</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have made a systematic investigation of the band diagram calculation of strained and unstrained In<sub>x</sub>
Ga<sub>1-x</sub>
As alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of In<sub>x</sub>
Ga<sub>1-x</sub>
As/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained In<sub>x</sub>
Ga<sub>1-x</sub>
As/GaAs system. The K valence band parameter as well as g* Landé factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C21L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Effet contrainte</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Stress effects</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Structure bande</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Band structure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Discontinuité bande</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Band offset</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Discontinuidad banda</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Bande valence</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Valence bands</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Facteur g</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>g-factor</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Masse effective</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Effective mass</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Exciton</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Excitons</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Alliage ordonné</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Ordered alloy</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Aleación ordenada</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Couche contrainte</s0>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Strained layer</s0>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Capa forzada</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fN21><s1>048</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001118 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 001118 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:14-0041696
   |texte=   Band parameters of InGaAs/GaAs quantum dots: electronic properties study
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Band parameters of InGaAs/GaAs quantum dots: electronic properties study

Band parameters of InGaAs/GaAs quantum dots: electronic properties study

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri